Batignani, Giovanni and Bosisio, Luciano and Carpinelli, Massimo and Diaconu, Cristinel and Elmer, P. and Forti, Francesco and Giorgi, Marcello A. and Rizzo, Giuliana and Triggiani, Giuseppe (1996) Results on double-sided d.c.-coupled silicon strip detectors irradiated with photons up to 1 Mrad. Il nuovo Cimento A, Vol. 109 (9), p. 1309-1318. ISSN 0369-3546. eISSN 1826-9869. Article.
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We irradiated with photons from a 60Co source a double-sided d.c.-coupled silicon strip detector and several test structures fabricated at CSEM. We measured the leakage currents and the interstrip and backside capacitances. Up to a maximum dose of 1 Mrad, the current densities are always below 350 nA/cm2, mostly due to thermally generated surface currents. The interstrip capacitances increase at most 17% with respect to not irradiated detectors, while the backside capacitances do not change.
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