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Results on double-sided d.c.-coupled silicon strip detectors irradiated with photons up to 1 Mrad

Batignani, Giovanni and Bosisio, Luciano and Carpinelli, Massimo and Diaconu, Cristinel and Elmer, P. and Forti, Francesco and Giorgi, Marcello A. and Rizzo, Giuliana and Triggiani, Giuseppe (1996) Results on double-sided d.c.-coupled silicon strip detectors irradiated with photons up to 1 Mrad. Il nuovo Cimento A, Vol. 109 (9), p. 1309-1318. ISSN 0369-3546. eISSN 1826-9869. Article.

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DOI: 10.1007/BF02773517

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We irradiated with photons from a 60Co source a double-sided d.c.-coupled silicon strip detector and several test structures fabricated at CSEM. We measured the leakage currents and the interstrip and backside capacitances. Up to a maximum dose of 1 Mrad, the current densities are always below 350 nA/cm2, mostly due to thermally generated surface currents. The interstrip capacitances increase at most 17% with respect to not irradiated detectors, while the backside capacitances do not change.
PACS 29.40.Wk - Solid-state detectors.
PACS 61.80.Ed - y-rays.
PACS 61.82.Fk - Radiation effect on semicondutors.
PACS 01.30.Cc - Conference proceedings

Item Type:Article
ID Code:9921
Uncontrolled Keywords:Silicon vertex detectors, photons, synchrotron radiation, 1 Mrad
Subjects:Area 02 - Scienze fisiche > FIS/07 Fisica applicata (a beni culturali, ambientali, biologia e medicina)
Divisions:001 Università di Sassari > 01-a Nuovi Dipartimenti dal 2012 > Chimica e Farmacia
Publisher:Societa Italiana di Fisica
Additional Information:Paper presented at the "2.nd International Conference on Large-Scale Applications and Radiation Hardness of Semiconductor Detectors", 28-30 June 1995, Florence, Italy.
Deposited On:26 Jun 2014 12:51

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