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The site of in dopants in Si

D'Acapito, Francesco and Golosio, Bruno and Shimizu, Y. and Scalese, Silvia and Italia, M. and Alippi, Paola and Grasso, S. (2007) The site of in dopants in Si. In: X-ray absorption fine structure - XAFS 13: 13th International Conference, July 9-14, 2006, Stanford (CA), USA. Melville, American Institute of Physics. p. 375-377. (AIP Conference Proceedings, 882). ISBN 978-0-7354-0384-0. Conference or Workshop Item.

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DOI: 10.1063/1.2644529


The electrical properties of dopants in Si are of primary importance for the realization of electronic devices. Indium represents a promising p-type dopant whose electrical properties are improved by co-doping with C. From theoretical studies In and C are expected to pair in the Si matrix in order to lower the strain energy. In this contribution we provide the first direct experimental determination of the sites of In and In-C complexes in Si. The experiment is particularly challenging because, due to the low solubility of the impurity and to the high energy of the K edge, a particular experimental procedure is needed to separate the fluorescence signal from the substrate scattering.

Item Type:Conference or Workshop Item (Paper)
ID Code:2632
Uncontrolled Keywords:Doping profiles, silicon, impurities, indium, carbon
Subjects:Area 02 - Scienze fisiche > FIS/07 Fisica applicata (a beni culturali, ambientali, biologia e medicina)
Divisions:001 Università di Sassari > 03 Istituti > Matematica e fisica
Publisher:American Institute of Physics
Deposited On:18 Aug 2009 10:08

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